PART |
Description |
Maker |
K4H511638B-TC/LB3 |
DDR Sdram 512Mb B-die
|
Samsung Semiconductor
|
K4H510438B-UC_LA2 K4H510438B-UC_LB0 K4H510438B-TC_ |
512MB B-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H51 |
512Mb C-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
EBD52UC8AMFA-6B EBD52UC8AMFA |
512MB Unbuffered DDR SDRAM DIMM DDR DRAM MODULE, DMA184
|
ELPIDA MEMORY INC
|
K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043 |
512Mb B-die DDR2 SDRAM
|
Samsung semiconductor
|
K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S |
512Mb B-die SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|